Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-07-15
1999-10-19
Williams, Alexander Oscar
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257770, 257347, 257388, 257410, 257764, 257763, H01L 2348
Patent
active
059694238
ABSTRACT:
An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The alumininum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
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Raina Kanwal K.
Wells David H.
Micro)n Technology, Inc.
Williams Alexander Oscar
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