Aluminum-containing films derived from using hydrogen and oxygen

Details Aluminum-containing films derived from using hydrogen and oxygen Aluminum-containing films derived from using hydrogen and oxygen

1999-04-12

2000-08-22

Booth, Richard

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257765, 257764, 257763, 257771, 438937, 438688, H01L 2345, H01L 2352, H01L 2940, H01L 2144

Patent

active

061076880

ABSTRACT:
An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is forced by introducing hydrogen gas and oxygen gas along with aragon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

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