Metal fusion bonding – Process – With pretreating other than heating or cooling of work part...
Reexamination Certificate
2000-03-10
2004-03-02
Dunn, Tom (Department: 1725)
Metal fusion bonding
Process
With pretreating other than heating or cooling of work part...
C228S205000, C228S194000, C204S298120
Reexamination Certificate
active
06698647
ABSTRACT:
TECHNICAL FIELD
The invention pertains to methods of bonding physical vapor deposition (PVD) target materials to backing plate materials, and also pertains to methods of bonding two aluminum-comprising masses to one another. Further, the invention pertains to structures comprising aluminum-comprising physical vapor deposition targets bonded to aluminum-comprising backing plates.
BACKGROUND OF THE INVENTION
Modern developments in physical vapor deposition methodologies have created increasingly stringent requirements for robust bonding between targets and backing plates. A diagrammatic view of a portion of an exemplary sputter deposition apparatus
10
is shown in FIG.
1
. Apparatus
10
comprises a backing plate
12
having a sputtering target
14
bonded thereto. A semiconductive material wafer
16
is within apparatus
10
and provided to be spaced from target
14
. Sputtered material
18
is displaced from target
14
and utilized to form a coating (not shown) over wafer
16
.
Among the modern improvements in sputter design is an increase in the distance between target
14
and semiconductive material substrate
16
. Such increase in distance can enable more directional sputtering to be achieved over features of substrate
16
than can be achieved when target
14
is close to substrate
16
by allowing atoms that are not moving perpendicular to substrate
16
to land on the sidewall of the sputtering chamber. Specifically, substrate
16
will frequently have vertical holes or slots (known as vias) with depths five times their width or more (i.e., having relatively high critical dimensions). It is difficult to sputter materials into vias having high critical dimensions unless there is a relatively long throw between a sputtering target and a substrate comprising the vias.
Although the longer throw creates advantages in coverage relative to shorter throw techniques, it also creates complications. One of such complications is caused by additional power utilized in long-throw technologies. The additional power can cause sputtering targets to get hotter than they had in older methods. Such heat can disrupt a bond formed between backing plate
12
and target
14
. For instance, if target
14
is solder-bonded to backing plate
12
, the heat developed during long-throw sputtering techniques can be sufficient to melt the solder bond and actually break target
14
free from backing plate
12
. Accordingly, solder-bonding can be inappropriate for long-throw sputtering techniques.
It would be desirable to develop improved methods for bonding physical vapor deposition targets to backing plates.
SUMMARY OF THE INVENTION
In one aspect, the invention encompasses an aluminum-comprising physical vapor deposition target bonded to an aluminum-comprising backing plate to a bond strength of greater than 10,000 pounds/in
2
.
In another aspect, the invention encompasses a method of bonding a first aluminum-comprising mass to a second aluminum-comprising mass. The first aluminum-comprising mass has a first surface, and the second aluminum-comprising mass has a second surface. At least one of the first and second surfaces is exposed to a mixture comprising HF and HNO
3
, and the first surface is then contacted with the second surface. The first and second masses are pressed together to bond the first mass to the second mass.
In yet another aspect, the invention encompasses a method of bonding a physical vapor deposition target material to a backing plate material. The target material and backing plate material are joined in physical contact with one another. The target material and backing plate material are then compressed under a load that progresses sequentially as follows: (1) the load is maintained at a first pressure of at least about 4 ksi for a time of at least about 20 seconds; (2) the load is increased by at least about 0.5 ksi to a new pressure; and (3) the load is maintained at the new pressure for at least about 20 seconds.
REFERENCES:
patent: 3758741 (1973-09-01), Holko et al.
patent: 4029253 (1977-06-01), Cartossi
patent: 4046305 (1977-09-01), Brown et al.
patent: 4300031 (1981-11-01), Reboux et al.
patent: 4352450 (1982-10-01), Edgington
patent: 4405427 (1983-09-01), Byrd
patent: 4459332 (1984-07-01), Giglia
patent: 4469757 (1984-09-01), Ghosh et al.
patent: 4485429 (1984-11-01), Mittal
patent: 4496095 (1985-01-01), Renshaw et al.
patent: 4603731 (1986-08-01), Oksen
patent: 4685987 (1987-08-01), Fick
patent: 4732312 (1988-03-01), Kennedy et al.
patent: 4838474 (1989-06-01), Ohashi et al.
patent: 4842706 (1989-06-01), Fukasawa et al.
patent: 4848647 (1989-07-01), Gentry et al.
patent: 4905886 (1990-03-01), Kennedy et al.
patent: 4978054 (1990-12-01), Ferrando et al.
patent: 5009765 (1991-04-01), Qamar et al.
patent: 5014161 (1991-05-01), Lee et al.
patent: 5077637 (1991-12-01), Martorana et al.
patent: 5143590 (1992-09-01), Strothers et al.
patent: 5150748 (1992-09-01), Blackmon et al.
patent: 5230459 (1993-07-01), Mueller et al.
patent: 5268236 (1993-12-01), Dumont et al.
patent: 5342496 (1994-08-01), Stellrecht
patent: 5402006 (1995-03-01), O'Donley
patent: 5455458 (1995-10-01), Quon et al.
patent: 5542471 (1996-08-01), Dickinson
patent: 5590389 (1996-12-01), Dunlop et al.
patent: 5599467 (1997-02-01), Okabe et al.
patent: 5674585 (1997-10-01), Ewing, Jr. et al.
patent: 5693203 (1997-12-01), Ohhashi et al.
patent: 5695847 (1997-12-01), Browne
patent: 5725494 (1998-03-01), Aihara et al.
patent: 6071389 (1998-08-01), Zhang
patent: 5807443 (1998-09-01), Masuda et al.
patent: 5836506 (1998-11-01), Hunt et al.
patent: 5852548 (1998-12-01), Koon et al.
patent: 5873973 (1999-02-01), Koon et al.
patent: 5938103 (1999-08-01), Hill et al.
patent: 6073830 (2000-06-01), Hunt et al.
patent: 6085966 (2000-07-01), Shimomuki et al.
patent: 6164519 (2000-12-01), Gilman et al.
patent: 6199259 (2001-03-01), Demaray et al.
patent: 6227432 (2001-05-01), Enomoto et al.
patent: 6274015 (2001-08-01), Beier et al.
patent: 6391465 (2002-05-01), Zheng et al.
patent: 6555250 (2003-04-01), Shah et al.
patent: 2002/0028538 (2002-03-01), Parfeniuk et al.
patent: 2002/0039810 (2002-04-01), Parfeniuk et al.
patent: 2002/0174917 (2002-11-01), Segal et al.
patent: 0 575 166 (1993-12-01), None
patent: 0 630 423 (1998-06-01), None
patent: 0881311 (1998-12-01), None
patent: 224914 (1991-09-01), None
patent: 06-065733 (1994-03-01), None
patent: 6-226455 (1994-08-01), None
patent: WO 97/28044 (1997-08-01), None
patent: WO 98/26107 (1998-06-01), None
Davis, J.R., “ASM Specialty Handbook: Aluminum and Aluminum Alloys”, date unknown, p. 320.
Porter, D. et al., “Phase Transformations in Metals and Alloys”, date unknown, pp. 75-83.
U.S. application No. 09/488,973, Parfeniuk et al., filed Jan. 20, 2000.
Stig W. Bolgen, Flocking Technology, 21 Journal Of Coated Fabrics 123-131 (Oct. 1991).
A. Kato et al., Formation of a Very Low-Reflectance Surface by Electostatic Flocking, 4thEuropean Symposium on Space Environmental and Control Systems, Florence, Italy (Oct. 21-24, 1991), pp. 565-568.
Masayuki Shigematsu et al., Application of Electrostatic Flocking to Thermal Control Coating, Institute of Space and Astronautical Science, Tokyo, Japan, pp. 583-586. (no date available).
U.S. application No. 09/103,415, Smith et al., filed Jun. 24, 1998.
PCT Search Report US01/07404 dated Aug. 2001
Dunn Tom
Edmondson L.
Honeywell International , Inc.
Wells St. John P.S.
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