Aluminum/ceramic bonding substrate and method for producing...

Details Aluminum/ceramic bonding substrate and method for producing... Aluminum/ceramic bonding substrate and method for producing...

2006-07-11

2006-07-11

Edmondson, Lynne R. (Department: 1725)

Metal fusion bonding

Process

Critical work component, temperature, or pressure

C228S122100, C228S219000, C228S262100

Reexamination Certificate

active

07073703

ABSTRACT:
An aluminum plate12having a purity of 99.5% or more, preferably 99.9% or more, is caused to contact at least one side of a ceramic substrate10of aluminum nitride or alumina to be heated at a temperature of 620 to 650° C. in an inert gas to bond the aluminum plate12directly to the ceramic substrate10.

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Patent Abstracts of Japan Publication No. 02175672, entitled Method For Joining Aluminium Nitride To Metallic Plate, By Sugimura Toshikazu, published Jul. 6, 1990.

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