Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2007-12-04
2007-12-04
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S703000, C257SE23009
Reexamination Certificate
active
11208246
ABSTRACT:
There is provided an aluminum/ceramic bonding substrate having a high reliability to high-temperature heat cycles. An aluminum member of an aluminum alloy having a Vickers hardness of 35 to 45 is bonded to a ceramic substrate having a flexural strength of 500 to 600 MPa in three-point bending. The ceramic substrate is made of high-strength aluminum nitride, silicon nitride, alumina containing zirconia, or high-purity alumina. The aluminum alloy is an aluminum alloy containing silicon and boron, or an aluminum alloy containing copper.
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Bachman & LaPointe P.C.
Dowa Mining Co. Ltd.
Parekh Nitin
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