Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-07-18
2006-07-18
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S432000, C257S762000, C257S765000, C257S768000, C257S771000, C313S503000, C313S509000
Reexamination Certificate
active
07078733
ABSTRACT:
A layered structure of wire(s) comprising a wiring layer made of a low resistance metal containing aluminum, copper or silver; and an alloy layer made of an intermediate phase containing the low resistance metal and a refractory metal. The refractory metal is molybdenum. There is also formed a layered structure of wire(s) made of an aluminum alloy containing a lanthanoid, wherein a number average crystal grain size is 16.9 nm or more. Crystal grain size may be larger than a mean free path of electrons to provide a layered structure of wire(s) with a reduced resistance.
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Office Action for corresponding Japanese Application No. 2002-066143 (w/English Translation) Reference No.: NBC 1022028 Dispatch No. 309284 Dispatch Date: Aug. 23, 2005 Patent Application No. 2002-066143 Drafting Date: Aug. 17, 2005 Examiner of JPO: Ken, Haseyama 9171 4M00 Title of Invention: Structure of Wires Applicant: Sanyo Electric Co., Ltd. Representative: Sakaki Morishita.
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Chinese Office Action issued in Application No. 02159777.4 Dispatch Date: Jan. 6, 2006.
Miyai Yoshio
Sotani Naoya
Suzuki Koji
Chambliss Alonzo
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
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