Aluminum alloy wiring layer and aluminum alloy sputtering target

Details Aluminum alloy wiring layer and aluminum alloy sputtering target Aluminum alloy wiring layer and aluminum alloy sputtering target

1994-07-19

1996-07-30

Zimmerman, John

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

148437, 420528, 428620, B32B 1520, C22C 2100, C22F 104

Patent

active

055410073

ABSTRACT:
An aluminum alloy wiring layer comprising 0.01 to 1.0 wt. % of scandium, or 0.01 to 1.0 wt. % of scandium and 0.01 to 3.0 wt. % of at least one element selected from the group consisting of silicon, titanium, copper, boron, hafnium and rare-earth elements other than scandium, and the balance aluminum having a purity of not less than 99.99%. A process for producing the same and an aluminum alloy sputtering target used therefor are also disclosed. The aluminum alloy wiring layer of the present invention is suitable as an advanced large-scale integrated circuit.

REFERENCES:
patent: 3619181 (1971-11-01), Willey
patent: 4080223 (1978-03-01), Schoerner et al.
patent: 4154874 (1979-05-01), Howard
patent: 4874440 (1989-10-01), Sawtell et al.
patent: 5133931 (1992-07-01), Cho
Database WPI, Section Ch, Week 7112, Derwent Publications Ltd., London, GB Class LO3, An 71-212605 & JP-A-46 011 607 (Matsushita Electric Ind).
International Search Report, Apr. 21, 1992 PCT/JP92/00034.
Translation of Japanese Kokai 1-289140, Arita et al., Nov. 21, 1989, pp. 1-33.

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