Aluminum alloy/silicon-chromium sandwich schottky diode

Details Aluminum alloy/silicon-chromium sandwich schottky diode Aluminum alloy/silicon-chromium sandwich schottky diode

1993-07-07

1994-03-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437176, 437177, 437192, 437200, 257281, 257472, 257477, H01L 2144

Patent

active

052964060

ABSTRACT:
A Schottky diode is presented which has reduced minority carrier injection and reduced diffusion of the metallization into the semiconductor. These improvements are obtained by interposing a layer comprising a mixture of silicon and chromium between the anode metallization layer and the semiconductor in a Schottky diode. The layer including chromium acts an effective barrier against the diffusion of the metallization layer into the semiconductor, and at the same time reduces the amount of minority carrier injection into the substrate. The layer including chromium requires no addition photolithograpic masks because it can be plasma etched using the metallization layer as a mask after that layer has been patterned.

REFERENCES:
patent: 4752813 (1988-06-01), Bhatm et al.
patent: 5049954 (1991-09-01), Shimada et al.
patent: 5072264 (1991-12-01), Jones
patent: 5212401 (1993-05-01), Humphreys et al.
patent: 5221639 (1993-06-01), White

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