Aluminum alloy line resistive to stress migration formed in semi

Details Aluminum alloy line resistive to stress migration formed in semi Aluminum alloy line resistive to stress migration formed in semi

1989-07-05

1991-01-29

LaRoche, Eugene R.

Metal treatment

Stock

Ferrous

357 71, 357 52, 357 54, 148 115A, 437197, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

049890646

ABSTRACT:
A first PSG film having a control hole is formed on a silicon substrate formed having a circuit, and a first aluminum alloy line layer resistive to stress migration made of Al-Si alloy is formed on the first PSG film, so as to electrically contact, via the contact hole, the surface of a semiconductor substrate. The alloy line layer is formed by use of a sputtering method, and the crystal face is oriented, mainly in the (111) plane, by controlling the substrate temperature at the time of sputtering, as well as the Ar gas pressure, the alloy depositing rate, and the degree of vacuum prior to the commencement of alloy depositing. The grain size l of the alloy crystal is set so as to satisfy "(W/14)<l<W" with respect to the width W of the line formed by etching, and preferably to also satisfy "(W/4)<l<(W/1.5)".

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