Aluminum alloy film for wiring and sputter target material...

Details Aluminum alloy film for wiring and sputter target material... Aluminum alloy film for wiring and sputter target material...

2007-01-23

2007-01-23

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S765000, C257S766000, C257S771000, C257SE23011, C204S298130

Reexamination Certificate

active

10976837

ABSTRACT:
Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than 3.0%. The invention is also directed to a sputter target material having the same chemical composition as that of the Al alloy film.

REFERENCES:
patent: 5906717 (1999-05-01), Hasegawa et al.
patent: 07-045555 (1995-02-01), None
patent: 2000-082210 (2000-03-01), None
patent: 2001-350159 (2001-12-01), None

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