Alumina-spinel diffusion semiconductor

Details Alumina-spinel diffusion semiconductor Alumina-spinel diffusion semiconductor

1975-12-03

1976-11-30

Kominski, John

Electric lamp and discharge devices

Spark plugs

Non-conducting material in or adjacent gap

29 2512, 313136, H01T 1302

Patent

active

039951847

ABSTRACT:
An improved semiconductor and semiconductor coating for alumina electrical insulating devices is disclosed. The semiconductor is prepared by applying a layer of a mixture of monoxide and sesquioxide combination to an alumina body and firing at a temperature of 2300.degree. or above thereby forming a stable spinel. The electrically-conductive monoxide can be FeO, Cu.sub.2 O, CuO, NiO, CoO or MnO. The sesquioxide can be Fe.sub.2 O.sub.3, Cr.sub.2 O.sub.3, Ga.sub.2 O.sub.3, Ca.sub.2 O.sub.3, Mn.sub.2 O.sub.3, Al.sub.2 O.sub.3 or Ti.sub.2 O.sub.3.

REFERENCES:
patent: 2265352 (1941-12-01), Corbin et al.
patent: 2684665 (1954-07-01), Tognola
patent: 2926275 (1960-02-01), Peras
patent: 2953704 (1960-09-01), Harris
patent: 3037140 (1962-05-01), Schurecht

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