Alternative plasma chemistry for enhanced photoresist removal

Details Alternative plasma chemistry for enhanced photoresist removal Alternative plasma chemistry for enhanced photoresist removal

1999-02-01

2000-10-10

Nelms, David

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, H01L 21311

Patent

active

061301663

ABSTRACT:
A CF.sub.4 /H.sub.2 O.sub.2 plasma is used to remove residues remaining after an ashing step. On a substrate, a layer of photoresist is formed over an underlying layer. The layer of photoresist is developed to form a photoresist pattern. The underlying layer is etched using the photoresist pattern. The substrate, including exposed areas of the underlying layer, are subjected to a plasma comprising H.sub.2 O.sub.2 vapor and a gaseous fluorocarbon to remove residual polymers.

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patent: 5925577 (1999-07-01), Solis
Fujimura, S. et al., "Resist Stripping in an O.sub.2 + H.sub.2 O Plasma Downstream," J. Vac. Sci. Technol. B, 9(2), pp. 357-361 (1991).
Sakugawa, H. et al. "Atmospheric Hydrogen Peroxide," Environ. Sci Technol., 24(10), pp. 1452, 1462 (1990).

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