Alternative doping for group III nitride LEDs

Details Alternative doping for group III nitride LEDs Alternative doping for group III nitride LEDs

2006-12-06

2010-10-12

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S085000, C257S094000, C257S096000, C257S103000, C257SE33033

Reexamination Certificate

active

07812354

ABSTRACT:
A light emitting diode is disclosed that is formed in the Group III nitride material system. The diode includes respective n-type and p-type layers for current injection and light emission. At least one n-type Group III nitride layer in the diode has dopants selected from the group consisting of elements with a larger atomic radius than silicon and elements with a larger covalent radius than silicon, with germanium and tellurium being exemplary.

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