Alternative doping for AlGaInP laser diodes fabricated by impuri

Details Alternative doping for AlGaInP laser diodes fabricated by impuri Alternative doping for AlGaInP laser diodes fabricated by impuri

1995-12-29

1998-04-28

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 88, 257607, 372 45, 372 46, H01S 319, H01L 29167

Patent

active

057455171

ABSTRACT:
The polarity of the semiconductor layers in an AlGaInP semiconductor laser fabricated by impurity induced layer disordering (IILD) is reversed to allow n-doping. Thus, the cladding and confinement layers between the substrate and the active layer will have p-type conductivity. The upper confinement, cladding, and contact layers can be either n or p-type conductivity with n-diffused regions formed by IILD extending down from the contact layer to the lower cladding layer. The electrodes can include either a substrate electrode or a lateral electrode.

REFERENCES:
patent: 5062115 (1991-10-01), Thornton
patent: 5073895 (1991-12-01), Omura
patent: 5138624 (1992-08-01), Hong et al.
patent: 5164797 (1992-11-01), Thornton
patent: 5216263 (1993-06-01), Paoli
patent: 5317586 (1994-05-01), Thornton et al.
patent: 5574745 (1996-11-01), Paoli et al.

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