Alternating rim phase-shifting mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430320, 430321, G03F 900

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active

054036828

ABSTRACT:
A phase-shifting mask consisting of phase shifting rim surrounding every pattern. The 0.degree. and 180.degree. areas defined by a straightforward rim phase-shifting mask are reversed alternately for closely packed patterns. This reversal can take the form of 0.degree. to 180.degree. and 180.degree. to 0.degree. as well as the form of 0.degree. to 180.degree. and 0.degree. to -180.degree. . For small opaque lines, the rim phase shifter may become the only picture element, leaving no mask absorber pattern inside the rim. Individual or uniform pattern sizing can be used to ensure a large common exposure-defocus window. Various fabrication techniques requiring or not requiring a second aligned exposure during mask fabrication, combining with several different forms of mask substrate are also described.

REFERENCES:
patent: 4989823 (1991-02-01), Chapman
patent: 5045417 (1991-09-01), Okamoto
patent: 5065214 (1991-11-01), Lapham et al.
patent: 5275894 (1994-01-01), Tanabe
patent: 5302477 (1994-04-01), Dao et al.
M. D. Levenson, et al., Improving Resolution in Photolithography with a Phase-Shifting Mask, IEEE Transactions of Electron Devices, vol. ED-29, Dec. 1982, pp. 1828-1836.
B. J. Lin, Phase-Shifting and Other Challenges in Optical Mask Technology, SPIE vol. 1496 10th Annual Symposium on Microlithography, 1990, pp. 54-78.
K. Nakagawa, et al., Fabrication of 64M DRAM with i-Line Phase-Shift Lithography, IEDM 90, pp. 817-820 (1990).
A. Nitayama, et al., New Phase Shifting Mask with Self-Aligned Phase Shifters for a Quarter Micron Photolithography, IEDM Technical Digest, pp. 57-60 (1989).

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