Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-05-12
2009-06-09
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S604000, C257SE31001
Reexamination Certificate
active
07544524
ABSTRACT:
An alternating current light-emitting device and the fabrication method thereof is disclosed. The alternating current light-emitting device includes at least one alternating current micro-die light-emitting module formed on a substrate and composed of at least two micro-dies connected to one another. The micro-dies, each includes at least two active layers, are electrically connected by a conductive structure, such that the active layers of the micro-dies take turns emitting light during positive and negative half cycles of alternating current, thereby providing a full-scale light-emitting area for all-time light emission.
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Huang Sheng-Pan
Lin Ming-Te
Lin Ming-Yao
Yeh Wen-Yung
Yen Hsi-Hsuan
Finnegan Henderson Farabow Garrett & Dunner LLP
Industrial Technology Research Institute
Lee Hsien-ming
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