Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-12-13
2005-12-13
Mai, Son (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185240
Reexamination Certificate
active
06975541
ABSTRACT:
A method for operating on bits of a memory cell, the method comprising providing a memory cell that has two separated and separately chargeable areas on first and second sides of the cell, each chargeable area defining one bit, applying an injection pulse and a verify pulse on the first side of the cell, and before the first side of the cell has reached a verify level, applying an injection pulse and a verify pulse on the second side of the cell.
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European Search Report for EP 04 007003.
Eitan Law Group
Mai Son
Saifun Semiconductors LTD
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