Alternate sensing techniques for non-volatile memories

Details Alternate sensing techniques for non-volatile memories Alternate sensing techniques for non-volatile memories

2008-03-25

2008-03-25

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S207000

Reexamination Certificate

active

11321996

ABSTRACT:
The present invention presents a scheme for sensing memory cells. Selected memory cells are discharged through their channels to ground and then have a voltage level placed on the traditional source and another voltage level placed on the control gate, and allowing the cell bit line to charge up. The bit line of the memory cell will then charge up until the bit line voltage becomes sufficiently high to shut off any further cell conduction. The rise of the bit line voltage will occur at a rate and to a level dependent upon the data state of the cell, and the cell will then shut off when the bit line reaches a high enough level such that the body effect affected memory cell threshold is reached, at which point the current essentially shuts off. A particular embodiment performs multiple such sensing sub-operations, each with a different control gate voltage, but with multiple states being sensed in each operation by charging the previously discharged cells up through their source.

REFERENCES:
patent: 5177706 (1993-01-01), Shinohara et al.
patent: 5412601 (1995-05-01), Sawada et al.
patent: 5521865 (1996-05-01), Ohuchi et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5602789 (1997-02-01), Endoh et al.
patent: 5652719 (1997-07-01), Tanaka et al.
patent: 5740112 (1998-04-01), Tanaka et al.
patent: 5870334 (1999-02-01), Hemink et al.
patent: 5949714 (1999-09-01), Hemink et al.
patent: 5969985 (1999-10-01), Tanaka et al.
patent: 6044013 (2000-03-01), Tanaka et al.
patent: 6069821 (2000-05-01), Jun et al.
patent: 6134140 (2000-10-01), Tanaka et al.
patent: 6134141 (2000-10-01), Wong
patent: 6181599 (2001-01-01), Gongwer
patent: 6208560 (2001-03-01), Tanaka et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6259627 (2001-07-01), Wong
patent: 6266270 (2001-07-01), Nobukata
patent: 6282117 (2001-08-01), Tanaka et al.
patent: 6363010 (2002-03-01), Tanaka et al.
patent: 6373746 (2002-04-01), Takeuchi et al.
patent: 6434055 (2002-08-01), Tanaka et al.
patent: 6462986 (2002-10-01), Khan
patent: 6545909 (2003-04-01), Tanaka et al.
patent: 6549464 (2003-04-01), Tanaka et al.
patent: 6556475 (2003-04-01), Yamazaki et al.
patent: 6798698 (2004-09-01), Tanaka et al.
patent: 7092295 (2006-08-01), Iwase et al.
patent: 7106626 (2006-09-01), Goldman et al.
patent: 2002/0101778 (2002-08-01), Khan
patent: 2002/0118574 (2002-08-01), Gongwer et al.
patent: 2004/0252567 (2004-12-01), Kato
patent: 2005/0013169 (2005-01-01), Tanaka et al.
patent: 2006/0291285 (2006-12-01), Mokhlesi
patent: 2007/0171744 (2007-07-01), Mokhlesi et al.
patent: 0 673 037 (1995-09-01), None
patent: 2004053882 (2004-06-01), None
patent: 2004114316 (2004-12-01), None
patent: WO 2007/076451 (2007-07-01), None
Nobukata et al., “A 144Mb 8-Level NAND Flash Memory with Optimized Pulse Width Programming,”1999 Symposium VLSI Circuits Digest on Technical Papers, pp. 39-40.
Johnson et al., “THPM 12.6: A 6Kb Electrically Erasable Nonvolatile Memory,”International Solid State Circuits Conference, Feb. 14, 1980, pp. 152-153, 271.
Ohkawa et al., “A 98mm23.3V 64Mb Flash Memory with FN-NOR Type 4-Level Cell,”IEEE International Solid State Circuits Conference, Session 2, Flash Memory, Paper TP 2.3, 1996, 36-37.
EPO/ISA, “Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration,” mailed in related International Patent Application No. PCT/US2006/062513 on Jul. 19, 2007, 15 pages.
USPTO, “Office Action,” mailed in related U.S. Appl. No. 11/320,917 on Aug. 16, 2007, 28 pages.

Affiliated with

Also associated with

Rating

Alternate sensing techniques for non-volatile memories does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Alternate sensing techniques for non-volatile memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Alternate sensing techniques for non-volatile memories will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3931289