AlPSb/InP single heterojunction bipolar transistor on InP substr

Details AlPSb/InP single heterojunction bipolar transistor on InP substr AlPSb/InP single heterojunction bipolar transistor on InP substr

1996-06-27

1997-03-18

Tokar, Michael J.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257201, H01L 310328

Patent

active

056125518

ABSTRACT:
An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.

REFERENCES:
patent: 4821082 (1989-04-01), Frank et al.
patent: 5041882 (1991-08-01), Katoh
patent: 5164800 (1992-11-01), Nakajima
Van de Walle, C. G., "Band Lineups and Deformation Potentials in the Model-Solid Theory", Physical Review B, vol. 39, No. 3, pp. 1871-1873 Jan. 1989.
Chris G. Van de Walle, "Band Lineups and Defomration Potentials in the Model-Solid Theory", Am. Phys. Soc., Phys. Rev. B., vol. 39, No. 3, pp. 1871-1883, Jan. 1989.

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