Alpha tantalum thin film circuit device

Wave transmission lines and networks – Coupling networks – Frequency domain filters utilizing only lumped parameters

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361306, 361311, H03H 102, H03H 706

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044108672

ABSTRACT:
Fabricating thin film RC networks (10) includes forming alpha tantalum capacitor base electrodes (14be) on a substrate (12), while simultaneously forming alpha tantalum anodization bus bars (14p and 14s) on the substrate. A portion of each base electrode (14be) then is anodized to form a capacitor dielectric (20) in a single anodizing step. A tantalum nitride resistor film (24) and electrically conductive films (26 and 28) then are deposited on the resultant assembly. Next, portions of the electrically conductive films are removed to define portions of capacitor counterelectrodes (22), to expose sections of the tantalum nitride resistor film (24) destined for use as resistors (24r). and to define conductor networks (30). Portions of the tantalum nitride resistor film (24) then are removed to define capacitor counterelectrode portions (24ce) and the resistors (24r), while simultaneously removing the anodization bus bars (14p and 14s). The resultant networks (10) then are thermally stabilized.

REFERENCES:
patent: 3607679 (1971-09-01), Melroy et al.
patent: 3616282 (1971-10-01), Bodway
patent: 3718565 (1970-11-01), Pelletier
patent: 3988824 (1976-11-01), Bodway
patent: 4058445 (1977-11-01), Anders
Anders--"Nitrogen-Doped Tantalum Thin Film Capacitors with Improved Temperature Stability", Thin Solid Films, vol. 27, 1975; pp. 135-140.
Anders--Properties of Tantalum Thin-Film Capacitors Variously Doped with Nitrogen as a Function of Frequency and Bias Voltage", Frequency, vol. 29, No. 5, 1975; pp. 133-136.
Duft et al.--"A High Stability RC Circuit Using High Nitrogen Doped Tantalum", Proceedings of the 28th Electronic Components Conference, Apr. 1978; pp. 229-233.

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