Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2011-06-28
2011-06-28
Ha, Nguyen T (Department: 2835)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S312000, C361S313000, C361S321100, C361S321200, C361S301400
Reexamination Certificate
active
07969708
ABSTRACT:
A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding element, thereby forming an alpha-tantalum seed layer, and sputtering a layer of tantalum on the alpha-tantalum seed layer, thereby forming a surface layer of substantially alpha-tantalum.
REFERENCES:
patent: 4364099 (1982-12-01), Koyama et al.
patent: 5783282 (1998-07-01), Leiphart
patent: 6100545 (2000-08-01), Chiyo et al.
patent: 6426512 (2002-07-01), Ito et al.
patent: 6812051 (2004-11-01), Usui et al.
patent: 7189588 (2007-03-01), Usui et al.
patent: 7205634 (2007-04-01), Liao et al.
patent: 7253109 (2007-08-01), Ding et al.
patent: 7662488 (2010-02-01), Oshima
patent: 7674699 (2010-03-01), Shibata
Wang, J.H., et al., “Ta and Ta—N diffusion barriers sputtered with various N2/Ar ratios for Cu metalization,” JVST B 20(4)—Microelectronics and Nanometer Structures, American Vacuum Society, Jul./Aug. 2002, pp. 1522-1526.
Chen Kei-Wei
Liao Miao-Cheng
Sun Phil
Tsao Jung-Chih
Ha Nguyen T
Slater & Matsil L.L.P.
Taiwan Semiconductor Company, Ltd.
LandOfFree
Alpha tantalum capacitor plate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Alpha tantalum capacitor plate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Alpha tantalum capacitor plate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2736036