Semiconductor device manufacturing: process – Making device array and selectively interconnecting
Reexamination Certificate
2005-04-12
2005-04-12
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
C438S662000
Reexamination Certificate
active
06878574
ABSTRACT:
An alloying method includes steps of forming a metal layer on a semiconductor that is then transferred to a material having a low thermal conductivity. An interface between the semiconductor and the metal layer is formed into an alloy by irradiating the interface with a laser beam having a wavelength that is absorbable in at least one of the semiconductor and the metal layer. Preferably, the material having a low thermal conductivity is a resin or amorphous silicon. Because the entire semiconductor is not heated and only a necessary portion is locally heated, the necessary portion can be readily alloyed to be converted into an ohmic contact without exerting adverse effects on the characteristics of the semiconductor device.
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Ohata Toyoharu
Tomoda Katsuhiro
Depke Robert J
Holland & Knight LLP
Isaac Stanetta
Niebling John F.
Sony Corporation
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