Patent
1984-05-10
1986-09-23
James, Andrew J.
357 71, 357 16, H01L 2354
Patent
active
046138900
ABSTRACT:
The invention relates to an alloyed contact for n-conducting GaAlAs semiconductor material with a high proportion of aluminum. According to the invention, a first layer consisting of a metal from one of the subgroups IVb, Vb or VIb of the periodic table is first applied to the n-conducting semiconductor material, this layer is then covered with a second metal layer consisting of a gold germanium alloy and both layers are alloyed together.
REFERENCES:
"A Monolithic Series-Connected A/0.93Ga0.07 As/GaAs Solar Cell Array"-Borden American Institute of Physics-Oct. 1979, pp. 553-554.
"A New Heterojunction-gate GaAs Fet"-Umebachi et al-Japanese Journal of Applied Physics, vol. 15, 1976, pp. 157-161.
K. K. Shih and J. M. Blum, "Contact Resistances of Au-Ge-Ni, Au-Zn and Al to III-V Compounds", Solid State Electronics, vol. 15 (1972), pp. 1177-1180.
Patent Abstracts of Japan, vol. 5, No. 197 (E-86) [869], Dec. 15, 1981; and JP-A-56,116,619 (Matsushita) Sep. 12, 1981.
H. J. Hovel et al "Solar Cell Structures", IBM Technical Disclosure Bulletin, vol. 16, No. 7,7, Dec. 1973, pp. 2079-2080.
P. S. Ho et al "Stable Junctions Between GaAs Semiconductors and Metal Contacts Using A Metallic Compound as a Diffusion Barrier", IBM Technical Disclosure Bulletin, vol. 21, No. 4, Sep. 1978, p. 1752.
Clark S. V.
James Andrew J.
Telefunken electronic GmbH
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