Alloy junction archival memory plane and methods for writing dat

Static information storage and retrieval – Radiant energy – Electron beam

Patent

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Details

29576B, 29590, 148185, 219121EM, 219121LM, 357 29, 357 31, 357 60, 365114, 365103, G11C 1142, G11C 1706

Patent

active

040817946

ABSTRACT:
A memory plane for an archival, non-volatile mass storage memory has a planar semiconductor diode with each of a plurality of small P-N junction diodes alloyed into the surface of its fabricated layer responsive to a selectively-actuated scanned energy beam at each location corresponding to a first binary value in a planar array of data sites. Formation of a P-N junction is prevented at each of the remaining sites of the planar data array to provide storage of data having the remaining binary value.
Several alternative methods for formation of the alloy junction surface diodes are disclosed.

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patent: 3537920 (1970-11-01), Carpentier
patent: 3648257 (1972-03-01), Wiese, Jr. et al.
patent: 3716844 (1973-02-01), Brodsky
patent: 3761895 (1973-09-01), Ellis et al.
patent: 3959799 (1976-05-01), Gambino et al.

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