All-silicon capacitive pressure sensor

Measuring and testing – Fluid pressure gauge – Diaphragm

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G01L 912

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active

059361646

ABSTRACT:
An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.

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patent: 4949581 (1990-08-01), Rud, Jr.
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patent: 5344523 (1994-09-01), Fung et al.
patent: 5490034 (1996-02-01), Zavracky et al.
patent: 5528452 (1996-06-01), Ko

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