All optical multiple quantum well optical modulator

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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257 21, 257 22, 257 82, 257 85, 359246, 359248, H01L 2714

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active

053230191

ABSTRACT:
A multiple quantum well optical modulator comprising a multiple quantum well structure embedded in the intrinsic region of an s-i-n+ semiconductor. The s-i-n+ structure causes an electric field to be applied to the multiple quantum well structure which causes uncoupling of the el energy confined level of one layer and the x level of the adjacent layer, thereby changing the absorption of the light and causing modulation thereof.

REFERENCES:
patent: 4546244 (1985-10-01), Miller
patent: 4716449 (1987-12-01), Miller
patent: 4904859 (1990-02-01), Goosen et al.
patent: 5105301 (1992-04-01), Campi
patent: 5225692 (1993-07-01), Takeuchi et al.
D. A. B. Miller et al, Physics Review B, vol. 32, No. 2, 15 Jul. 1985, "Etric Field Dependence of Optical Absorption Near the Bandgap of Quantum-Well Structures," pp. 1043-1060.
D. A. B. Miller, "Optoelectronic Applications of Quantum Wells," Optics & Photonics News, Feb. 1990, pp. 7-15.

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