All NPN-transistor PTAT current source

Details All NPN-transistor PTAT current source All NPN-transistor PTAT current source

2011-05-31

2011-05-31

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

External effect

Temperature

C327S538000, C327S512000

Reexamination Certificate

active

07952421

ABSTRACT:
The present invention relates to an improved PTAT current source and a respective method for generating a PTAT current. Opportune collector currents are generated and forced in two transistors exploiting the logarithmic relation between the base-emitter voltage and the collector current of a transistor. A resistor senses a voltage difference between the base-emitter voltages of the two transistors, which can have either the same or different areas. A fraction of the current flowing through the resistor is forced into a transistor collector and mirrored by an output transistor for providing an output current. By this principle an all npn-transistor PTAT current source can be provided that does not need pup transistors as in conventional PTAT current sources. The invention is generally applicable to a variety of different types of integrated circuits needing a PTAT current reference, especially in modern advanced technologies as InP and GaAs where p-type devices are not available. For example, the PTAT current source circuit of the invention can be used in radio frequency power amplifiers, in radio frequency tag circuits, in a satellite microwave front-end.

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