All implanted MOS transistor

Details All implanted MOS transistor All implanted MOS transistor

1980-06-09

1983-09-13

Edlow, Martin H.

357 41, 357 91, H01L 2978

Patent

active

044045760

ABSTRACT:
A MOSFET structure having DMOS characteristics fabricated using all implantation only without the use of time-consuming diffusion. Particularly the critical length of the channel is controlled by beveling one edge of an oxide layer to a predetermined slope thereby allowing transferral of ions to the substrate through the beveled edge only to a predetermined depth thereof before being completely shielded. The result is a channel having a closely controlled length to thus be relatively very short for very fast switching of low or high voltage signals.

REFERENCES:
patent: 4190850 (1980-02-01), Tihanyi
patent: 4288806 (1981-09-01), Ronen
patent: 4291321 (1981-09-01), Pfleiderer
patent: 4329186 (1982-05-01), Kotecha

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