All diamond self-aligned thin film transistor

Details All diamond self-aligned thin film transistor All diamond self-aligned thin film transistor

2008-07-01

2008-07-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C438S105000, C257S410000, C257SE21041, C257SE21049, C257SE21182

Reexamination Certificate

active

11226703

ABSTRACT:
A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

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