All diamond self-aligned thin film transistor

Details All diamond self-aligned thin film transistor All diamond self-aligned thin film transistor

2008-07-01

2008-07-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C438S105000, C257S410000, C257SE21041, C257SE21049, C257SE21182

Reexamination Certificate

active

07394103

ABSTRACT:
A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

REFERENCES:
patent: 4981818 (1991-01-01), Anthony et al.
patent: 5107315 (1992-04-01), Kumagai et al.
patent: 5173761 (1992-12-01), Dreifus et al.
patent: 5254862 (1993-10-01), Kalyankjumar et al.
patent: 5371383 (1994-12-01), Miyata et al.
patent: 5382809 (1995-01-01), Nishibayashi et al.
patent: 5382822 (1995-01-01), Stein
patent: 5420443 (1995-05-01), Dreifus et al.
patent: 5455432 (1995-10-01), Hartsell et al.
patent: 5491348 (1996-02-01), Koyamao et al.
patent: 5506422 (1996-04-01), Dreifus et al.
patent: 5523588 (1996-06-01), Nishimura et al.
patent: 5633513 (1997-05-01), Koyama et al.
patent: 6492309 (2002-12-01), Behr et al.
patent: 2005/0110024 (2005-05-01), Swain et al.
patent: 7-321317 (1995-12-01), None

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