Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-12-08
2009-11-17
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S753000, C252S079100
Reexamination Certificate
active
07618897
ABSTRACT:
An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1Ω·cm using the etching liquid.
REFERENCES:
patent: 3639815 (1972-02-01), Ernick et al.
patent: 3909119 (1975-09-01), Wolley
patent: 6110839 (2000-08-01), Nakano et al.
patent: 6284384 (2001-09-01), Wilson et al.
patent: 6319845 (2001-11-01), Uchiyama et al.
patent: 6362106 (2002-03-01), Kaufman et al.
patent: 6586336 (2003-07-01), Jeong
patent: 2002/1015125 (2002-10-01), Kawase et al.
patent: 2003/0008504 (2003-01-01), Miyazaki
patent: 2005/0204639 (2005-09-01), Ishihara
Hashimoto Yasuyuki
Nakashima Takahisa
Takemura Makoto
Chen Kin-Chan
Pillsbury Winthrop Shaw & Pittman LLP
Sumco Corporation
LandOfFree
Alkali etching liquid for silicon wafer and etching method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Alkali etching liquid for silicon wafer and etching method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Alkali etching liquid for silicon wafer and etching method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4078751