Alkali etching liquid for silicon wafer and etching method...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S753000, C252S079100

Reexamination Certificate

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07618897

ABSTRACT:
An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1Ω·cm using the etching liquid.

REFERENCES:
patent: 3639815 (1972-02-01), Ernick et al.
patent: 3909119 (1975-09-01), Wolley
patent: 6110839 (2000-08-01), Nakano et al.
patent: 6284384 (2001-09-01), Wilson et al.
patent: 6319845 (2001-11-01), Uchiyama et al.
patent: 6362106 (2002-03-01), Kaufman et al.
patent: 6586336 (2003-07-01), Jeong
patent: 2002/1015125 (2002-10-01), Kawase et al.
patent: 2003/0008504 (2003-01-01), Miyazaki
patent: 2005/0204639 (2005-09-01), Ishihara

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