Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2009-01-15
2010-12-28
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S079000
Reexamination Certificate
active
07858962
ABSTRACT:
A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.
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Hooper Stewart Edward
Sénès Mathieu Xavier
Smeeton Tim Michael
Smith Katherine Louise
Prenty Mark
Renner , Otto, Boisselle & Sklar, LLP
Sharp Kabushiki Kaisha
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