Alignment target for electron-beam write system

Details Alignment target for electron-beam write system Alignment target for electron-beam write system

1981-05-04

1982-09-28

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

156653, 156657, 427 88, 427 96, 430296, 430314, H01L 21312

Patent

active

043518923

ABSTRACT:
An alignment target for an electron-beam direct write system is formed on a wafer of semiconductor material. First, a layer of silicon oxide is formed on a surface of the wafer. Then a layer of silicon nitride is formed on the oxide. Next, an opening is etched in the nitride layer to expose a surface portion of the oxide. The surface portion of the oxide is then etched to form a hole in the oxide. The hole is formed such that the oxide layer is undercut beneath the nitride layer such that a cantilevered nitride overhang is formed around the perimeter of the hole. A layer of aluminum is then deposited over the nitride layer.

REFERENCES:
patent: 3956527 (1976-05-01), Magdo
patent: 4109029 (1978-08-01), Ozdemir
patent: 4252840 (1981-02-01), Minami
patent: 4272561 (1981-06-01), Rothman
Sakakibara et al., "Electron-Beam Direct Writing Technology for 1 Micron VLSI Fabrication" Conference:IE Devices Meeting Technical Digest, Washington, DC, (8-10 Dec., 1980).
Kim "Method of Removing Nitride Overhang Ledge by Differential Etch Technique" IBM TDB, vol. 21, No. 4, Sep. 1978.

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