Alignment method of exposure mask and manufacturing method...

Radiation imagery chemistry: process – composition – or product th – Registration or layout process other than color proofing

Reexamination Certificate

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C430S001000, C430S030000, C356S401000, C359S012000, C359S015000, C359S035000

Reexamination Certificate

active

11223956

ABSTRACT:
A method for aligning an exposure mask comprises: using a plurality of hologram masks, on which an alignment mark is formed; aligning position of the hologram masks toward an object to be exposed and on which an alignment mark is also formed, with a plurality of times by using both alignment marks; and pattern-exposing the object, wherein, while aligning at least three consecutive times, an alignment mark for third time aligning on the object is set in between alignment marks respectively for second time aligning and first time aligning, or at a position on an opposite side to a side in which the alignment mark for second time aligning is located with respect to the alignment mark for first time aligning.

REFERENCES:
patent: 6329104 (2001-12-01), Clube et al.
Francis Cube, et al., “P-40: 0.5 μm Enabling Lithography for Low-Temperature Polysilicon Displays”, SID 03 Digest, 2003, pp. 350-353.
Ali Reza Nobari, et al., “Magnification Compensating 0.4 μm Exposure System for Peripheral ICs”, IDW'04, pp. 765-766.

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