Alignment method and exposure apparatus using the method

Details Alignment method and exposure apparatus using the method Alignment method and exposure apparatus using the method

2005-01-04

2005-01-04

Chaudhari, Chandra (Department: 2813)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S548000

Reexamination Certificate

active

06838686

ABSTRACT:
A method for aligning existing layers formed prior to a new layer and the new layer in forming the new layer on a wafer4, wherein a microscope6as a first measurement condition and a microscope7as a second measurement condition are used, and marks4aand4bformed in each of said existing layers are measured by switching the first and second conditions, and said existing layers and said new layer are aligned based on measurement of mark position of each of said existing layers, and the microscope7has a plurality of measurement conditions as optical characteristics, and the measurement conditions are switched.

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