Alignment method

Details Alignment method Alignment method

1992-01-10

1994-12-27

Rosenberger, Richard A.

Optics: measuring and testing

By alignment in lateral direction

With registration indicia

355 53, G01B 1100, G03B 2742

Patent

active

053770099

ABSTRACT:
A method of aligning a mask and a wafer includes a step for providing the mask with first and second patterns each having an optical power and providing the wafer with first and second marks each having an optical power. A radiation beam irradiating the first pattern and the first mark produces a first beam, displaceable at a first magnification with a positional deviation of the wafer with respect to the mask, and irradiating the second pattern and the second mark produces a second beam, displaceable at a second magnification, larger than the first magnification, with a positional deviation of the wafer with respect to the mask. A first detecting step projects a radiation beam to the first mark and the first pattern to produce the first beam and detects a positional deviation of the wafer with respect to the mask based on the first beam. A first aligning step roughly aligns the wafer with the mask in accordance with the first detecting step. A second detecting step projects a radiation beam to the second pattern and the second mark to produce the second beam, and detects the residual positional deviation of the wafer and the mask based on the second beam. A second aligning step precisely aligns the mask and the wafer based on the second detecting step.

REFERENCES:
patent: 4606643 (1986-08-01), Tam
patent: 4808002 (1989-02-01), Tojo et al.
patent: 4815854 (1989-03-01), Tanaka et al.
patent: 4948983 (1990-08-01), Maruyama et al.
Patent Abstracts of Japan, vol. 10, No. 65, an English Abstract published Mar. 14, 1986 of Japanese Patent No. 60-216,548.
"Optical Alignment System for Submicron X-Ray Lithography" Journal of Vacuum Science and Technology, vol. 16, No. 6, Nov. 1979, New York US, pp. 1954-1958, B. Fay et al.

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