Alignment mark forming method, substrate in which devices...

Details Alignment mark forming method, substrate in which devices... Alignment mark forming method, substrate in which devices...

2007-07-10

2007-07-10

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S462000, C257S797000, C257SE23179

Reexamination Certificate

active

10935107

ABSTRACT:
A method of manufacturing functional elements by forming a plurality of functional elements each having a through-hole piercing a surface on a substrate. The method includes the steps of forming an alignment mark on a surface of the substrate in an area in which the functional elements are constituted and the through-hole is formed in an additional process, forming an anti-etching layer on a reverse surface of the substrate, and providing on the reverse surface of the substrate a photomask having a pattern shape for forming the through-hole and a mark shape for registering the alignment mark and forming the through-hole by removing the etching layer corresponding to the through-hole. The mark shape is located at a position corresponding to a region where the through-hole is formed on the reverse surface of the substrate and is capable of being registered to the alignment mark. The method further includes the step of forming the through-hole by removing a portion, which is the through-hole, including the alignment mark, from the substrate.

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Chinese Office Action dated Nov. 4, 2005, issued in corresponding Chinese patent application No. 200410078912.7.
Chinese Office Action dated Jun. 23, 2006, issued in corresponding Chinese patent application No. 2004-100789127, and English translation.

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