Alignment mark and structure covering the same

Details Alignment mark and structure covering the same Alignment mark and structure covering the same

1998-06-22

2000-03-14

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

H01L 23544

Patent

active

060376708

ABSTRACT:
An alignment mark AM appears on the surface of an aluminum (Al) wiring layer 110 when the Al wiring layer is formed to fill up a recess 108 therewith, the recess 108 being formed in oxide layers 104 and 106 formed over the surface of a silicon substrate 102 by etching these layers in part. The depth of the recess 108 is controlled such that there is formed no direct contact between the Al wiring layer 110 and the metallic silicon of the silicon substrate 102. Consequently, in the process of forming the alignment mark, the Al wiring layer 110 is prevented from chemically reacting with the metallic silicon. Thus, there is caused neither deterioration in the quality of oxide films 104 and 106, nor destruction of the alignment mark AM appearing on the surface of the Al wiring layer 110, even if the Al wiring layer 110 is formed by sputtering aluminum on oxide layers and the recess as well at a high temperature.

REFERENCES:
patent: 5405810 (1995-04-01), Mizuno et al.
patent: 5869383 (1999-02-01), Chien et al.

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