Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2008-09-02
2008-09-02
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S030000, C438S401000, C438S975000, C438S462000, C257S283000, C257S797000
Reexamination Certificate
active
11160683
ABSTRACT:
A small-size (w<0.5 micrometers) alignment mark in combination with a “k1 process” is proposed, which is particularly suited for the fabrication of trench-capacitor DRAM devices which requires highly accurate AA-DT alignment. The “k1 process” is utilized to etch away polysilicon studded in the alignment mark trenches and refresh the trench profile prior to AA pattern transferring, thereby improving wafer alignment accuracy and precision.
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Lee Pei-Ing
Liu An-Hsiung
Mao Hui-Min
Shih Chiang-Lin
Su Lin-Chin
Hsu Winston
Nanya Technology Corp.
Singal Ankush k
Smith Matthew S.
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