Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2008-06-27
2010-10-19
Blum, David S (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S030000, C257SE21001, C257SE21540, C257SE23179
Reexamination Certificate
active
07816223
ABSTRACT:
Provided are an alignment key, a method for fabricating the alignment key, and a method for fabricating a thin film transistor substrate using the alignment key. The method for fabricating the alignment key includes forming a first metal layer on a base substrate, forming a first alignment key and a first mark portion of a second alignment key by selectively patterning the first metal layer, forming a dielectric on the first metal layer, forming a second metal layer on the dielectric, and forming a second mark portion of the second alignment key on the dielectric by selectively patterning the second metal layer.
REFERENCES:
patent: 7569153 (2009-08-01), Baek et al.
patent: 2007/0298169 (2007-12-01), Kim et al.
Chang Youn Gyoung
Kim Nam Kook
Nam Seung Hee
Yoo Soon Sung
Blum David S
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
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