Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2011-08-23
2011-08-23
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C257SE23179
Reexamination Certificate
active
08004098
ABSTRACT:
An alignment key, a method for fabricating the alignment key, and a method for fabricating a thin film transistor substrate using the alignment key are provided. The alignment key includes a base substrate, a first alignment key and a first mark portion of a second alignment key, which are formed on the base substrate using a printing roll, a dielectric that is formed on the base substrate to cover the first alignment key, and a second mark portion of the second alignment key, which is formed on the dielectric and at least partly overlaps the first mark portion of the second alignment key.
REFERENCES:
patent: 5631111 (1997-05-01), Niu et al.
patent: 7569153 (2009-08-01), Baek et al.
patent: 2007/0298169 (2007-12-01), Kim et al.
patent: 2009/0231820 (2009-09-01), Tanaka
Chang Youn Gyoung
Kim Nam Kook
Nam Seung Hee
Yoo Soon Sung
Blum David S
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
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