Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2006-11-30
2010-06-15
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C438S401000, C430S005000
Reexamination Certificate
active
07737566
ABSTRACT:
Alignment marks for use on substrates. An exemplary implementation provides phase depth control. A grating mark, for example, can be etched on a silicon wafer with sub-wavelength segmentation in the spacing portion of the alignment grating's period. The sub-wavelength segmentation can be applied to the spaces or to the lines, or both, of an alignment grating to control the phase depth of the grating. By applying segmentation with a period smaller than the alignment light wavelength in either the space(s) and/or in the line(s) of the grating, the effective refractive index in that region can be manipulated. This change in the effective index will result in a change in the phase depth (optical path length). By varying the duty cycle of the sub-wavelength segmented region, the effective refractive index can be controlled, thereby providing selective control over the phase depth.
REFERENCES:
patent: 5477309 (1995-12-01), Ota et al.
patent: 6628392 (2003-09-01), Kuroda et al.
patent: 6933523 (2005-08-01), Sheck
patent: 7374869 (2008-05-01), Kohler et al.
patent: 2004/0075179 (2004-04-01), Liu et al.
patent: 2004/0227945 (2004-11-01), Nohdo
patent: 06-224546 (1994-08-01), None
patent: 07-254546 (1995-10-01), None
patent: 2001-060543 (2001-03-01), None
patent: 2001-168194 (2001-06-01), None
patent: 2001-296442 (2001-10-01), None
patent: 2004-077885 (2004-03-01), None
patent: 2004-508711 (2004-03-01), None
patent: 2005-079249 (2005-03-01), None
Philippe Lalanne, et al., “Design and fabrication of blazed binary diffractive elements with sampling periods smaller than the structural cutoff,” J. Opt. Soc. Am. A, vol. 16, No. 5, pp. 1143-1156 (May 1999).
Philippe Lalanne, et al., “Antireflection Behavior of Silicon Subwavelength Periodic Structures for Visible Light,” Nanotechnology 8 (1997), pp. 53-56.
English translation of Japanese Official Action issued on Jun. 16, 2009 in Japanese Application No. 2006-150762.
Musa Sami
Van Haren Richard Johannes Franciscus
ASML Netherlands B.V.
Coleman W. David
Pillsbury Winthrop Shaw & Pittman LLP
LandOfFree
Alignment devices and methods for providing phase depth control does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Alignment devices and methods for providing phase depth control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Alignment devices and methods for providing phase depth control will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4171414