Alignment devices and methods for providing phase depth control

Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks

Reexamination Certificate

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C438S401000, C430S005000

Reexamination Certificate

active

07737566

ABSTRACT:
Alignment marks for use on substrates. An exemplary implementation provides phase depth control. A grating mark, for example, can be etched on a silicon wafer with sub-wavelength segmentation in the spacing portion of the alignment grating's period. The sub-wavelength segmentation can be applied to the spaces or to the lines, or both, of an alignment grating to control the phase depth of the grating. By applying segmentation with a period smaller than the alignment light wavelength in either the space(s) and/or in the line(s) of the grating, the effective refractive index in that region can be manipulated. This change in the effective index will result in a change in the phase depth (optical path length). By varying the duty cycle of the sub-wavelength segmented region, the effective refractive index can be controlled, thereby providing selective control over the phase depth.

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English translation of Japanese Official Action issued on Jun. 16, 2009 in Japanese Application No. 2006-150762.

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