Alignment and exposure apparatus

Photocopying – Projection printing and copying cameras – Identifying – composing – or selecting

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Details

355 53, 355 77, G03B 2742, G03B 2770

Patent

active

051482142

ABSTRACT:
A mark detecting device usable in an alignment and exposure apparatus for aligning an alignment mark of a mask with an alignment mark of a wafer and for exposing a resist layer provided on the surface of the wafer to a pattern of the mask with radiation. The device includes a system for detecting light from the wafer, the detecting system including a photodetecting device for detecting light and a wavelength selecting element disposed in a path of light from the wafer to the photodetecting device so as to allow introduction of light of a predetermined wavelength into the light path from outside the light path to illuminate the wafer, and a portion for forming a photoprint of the alignment mark of the mask in the resist layer provided on the surface of the wafer, the photoprint forming portion being arranged, for the formation of the photoprint, to direct, to the wafer, the light of the predetermined wavelength from the outside of the light path and by way of the mask and the wavelength selecting element, wherein the photodetecting device is effective to detect the light from the wafer to detect the alignment mark of the wafer and the photoprint of the alignment mark of the mask.

REFERENCES:
patent: 4573791 (1986-03-01), Phillips
patent: 4641035 (1987-02-01), Suzuki et al.
patent: 4685807 (1987-08-01), Picard
patent: 4741622 (1988-05-01), Suwa et al.
patent: 4752668 (1988-06-01), Rosenfield et al.
Photo-etching of PMMA by Excimer Laser Irradiation by Kawamura et al., The Institute of Physical and Chemical Research Waho-shi, Saitama pp. 69-71, Nov. 6, 1980.
"Photoablation of Resist Coated Alignment Targets to Improve VLSI Pattern Overlay", vol. 774 Lasers in Microlithography (1987) Lithography Trends; Semiconductor International, vol. 23 (Dec. 1986).
Nikkei Microdevices, Feb. 1987 issue, pp. 113-124.

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