Aligning polymer films

Details Aligning polymer films Aligning polymer films

2011-03-15

2011-03-15

Tran, Binh X (Department: 1713)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

C216S042000, C216S046000, C216S049000, C216S067000

Reexamination Certificate

active

07906031

ABSTRACT:
A Method. The method includes forming a substructure, on a substrate, including a feature having a sidewall of a first material and a bottom surface of a second material. Applying a solution including two immiscible polymers and third material to the substructure. The immiscible polymers include a first and second polymer. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. The first polymer is selectively removed. The second polymer remains, resulting in forming structures including the substructure, the third material, and the second polymer. The substructure has a pattern. The pattern is transferred to the substrate.

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