Aligned semiconductor structure

Details Aligned semiconductor structure Aligned semiconductor structure

1997-02-11

2000-02-15

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 61, 257 72, 257353, 257354, H01L 2904, H01L 31036, H01L 310376, H01L 3120

Patent

active

060256052

ABSTRACT:
The number of mask steps used to fabricate a TFT in an AMLCD is reduced. In particular, source and drain metallizations, as well as doped and undoped semiconductor layers are patterned at the same time, and the source and drain metallizations and the doped semiconductor layer are etched in a single etching step using an insulating passivation layer as a mask to form source and drain electrodes. Manufacturing costs can be reduced and the manufacturing yield can be improved.

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