AlGaN/GaN high electron mobility transistor devices

Details AlGaN/GaN high electron mobility transistor devices AlGaN/GaN high electron mobility transistor devices

2005-06-29

2009-06-16

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S012000, C257S200000, C257S201000, C257SE29246, C257SE29247, C257SE21403, C257SE21407

Reexamination Certificate

active

07547928

ABSTRACT:
The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy, with higher performance (power), by covering the surface with a thin SiN layer on the top AlGaN layer, in the reactor where the growth takes place at high temperature, prior cooling down the structure and loading the sample out of the reactor, as well as a method to produce some HEMT transistors on those heterostructures, by depositing the contact on the surface without any removal of the SiN layer by MOCVD. The present invention recites also a device.

REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 5445979 (1995-08-01), Hirano
patent: 2002/0096692 (2002-07-01), Nakamura et al.
patent: 2002/0167023 (2002-11-01), Chavarkar et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2005/0173728 (2005-08-01), Saxler
patent: 2003 115487 (2003-04-01), None
patent: WO 01/13436 (2001-02-01), None
Search report dated Nov. 19, 2007 for equivalent European Patent No. 05447155.2-2203 filed Jun. 29, 2005.

Affiliated with

Also associated with

Rating

AlGaN/GaN high electron mobility transistor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with AlGaN/GaN high electron mobility transistor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and AlGaN/GaN high electron mobility transistor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4069531