Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-02-08
2005-02-08
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S101000, C257S079000
Reexamination Certificate
active
06853012
ABSTRACT:
An AlGaInP light emitting diode with improved illumination is provided. The AlGaInP light emitting diode includes a semiconductor substrate, a light re-emitting layer, an AlGaInP layer with a first doping concentration, an AlGaInP lower cladding layer with a second doping concentration less than the first doping concentration, an undoped AlGaInP active layer, an AlGaInP upper cladding layer, a window layer, an annular-shaped top electrode on the window layer and a layered electrode on a bottom of the semiconductor substrate. The light re-emitting layer includes at least a first region formed of the light re-emitting layer and a second region formed of Al2O3enclosing the first region. Since AlGaInP layer between the AlGaInP lower cladding layer and the light re-emitting layer has the first doping concentration larger than that of the AlGaInP lower cladding layer, the AlGaInP layer provides a transverse current spreading. The Al2O3region also improves light reflection illuminating on the light re-emitting layer. As a result, the brightness performance of the light emitting diode is improved.
REFERENCES:
patent: 5706306 (1998-01-01), Jiang et al.
patent: 5719892 (1998-02-01), Jiang et al.
patent: 5719893 (1998-02-01), Jiang et al.
Chen Nai-Chuan
Chou Yi-Lun
Yih Nae-Guann
Dickey Thomas L
Rosenberg , Klein & Lee
Tran Minhloan
Uni Light Technology Inc.
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