AlGaInP light emitting device

Details AlGaInP light emitting device AlGaInP light emitting device

1994-05-31

1995-08-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257103, 372 45, 372 46, H01L 3300

Patent

active

054442699

ABSTRACT:
An AlGaInP double heterojunction structure or an AlGaInP single heterojunction structure is formed on a first conductivity-type GaAs substrate, and then a layer made of a second conductivity-type Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v mixed crystal (Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03, for example) which has the bandgap energy larger than the energy of photon emitted from the active layer of said light emitting layer portion, and has good lattice-matching with (Al.sub.B Ga.sub.1-B).sub.0.51 In.sub.0.49 P mixed crystal (layer) constituting said light emitting layer portion, is formed as a current spreading layer on top of said light emitting layer portion. Here, w and v are in the range of 0.45.ltoreq.w<1 and 0<v.ltoreq.0.08, respectively.

REFERENCES:
patent: 4288757 (1981-09-01), Kajimura
patent: 4494237 (1985-01-01), Di Forte Poisson et al.
patent: 4706255 (1987-11-01), Thornton et al.
patent: 4727557 (1988-02-01), Burnham et al.
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5091757 (1992-02-01), Yoshida
patent: 5202285 (1993-04-01), Jugano et al.
K. H. Huang et al., Applied Physics Letters, vol. 61, No. 9, pp. 1045-1047, Aug. 31, 1992.

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