Algainp light-emitting device

Details Algainp light-emitting device Algainp light-emitting device

1995-12-26

1998-04-14

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 97, 257103, 372 46, H01L 3300

Patent

active

057395535

ABSTRACT:
The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), an (Al.sub.0.15 Ga.sub.0.85).sub.0.51 In.sub.0.49 P active layer (about 0.6 .mu.m in thickness), a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), and a p-type current-spreading layer composed of either a p-type Al.sub.0.7 Ga.sub.0.3 As layer (about 3 .mu.m in thickness) or a p-type Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03 layer (about 3 .mu.m in thickness) and a p-type GaAs.sub.0.5 P.sub.0.5 layer (about 7 .mu.m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs.sub.0.5 P.sub.0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5442203 (1995-08-01), Adomi et al.
patent: 5444269 (1995-08-01), Adomiet et al.
patent: 5488235 (1996-01-01), Nozaki et al.

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