Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-12-06
2005-12-06
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S097000, C257S095000, C257S101000, C257S102000
Reexamination Certificate
active
06972437
ABSTRACT:
Disclosed is an AlGaInN LED with improved external quantum efficiency, in which a chip employing the LED has a horizontal plane formed in a lozenge shape so that the amount of total reflection of light is reduced when the light generated from an active layer interposed between hetero-semiconductor layers with different band gaps is emitted to the outside. Since the horizontal plane of the LED is formed to have a lozenge shape so that the amount of total reflection of light generated in the LED is reduced, it is possible to maximize external quantum efficiency determined by the degree of emission of the light generated in the active layer. The cleaved plane of the LED coincides with the crystal orientation of a wafer made of GaN or sapphire, thus improving the yield of the LED when the LED is cut and produced. Since an anode and a cathode of the LED are disposed so that they diagonally face each other, it is possible to optimize the current spreading between the anode and the cathode and to improve luminous efficiency so that light generated in the active layer is uniformly emitted.
REFERENCES:
patent: 5874803 (1999-02-01), Garbuzov et al.
patent: 6133589 (2000-10-01), Krames et al.
patent: 6233265 (2001-05-01), Bour et al.
patent: 6649939 (2003-11-01), Wirth
patent: 6670751 (2003-12-01), Song et al.
Blackwell Sanders Peper Martin LLP
Lee Eddie
Magee Thomas
Samsung Electro-Mechanics Co. Ltd.
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